http://www.blogcdn.com/www.engadget.com/media/2012/09/globalfoundries-14nm-xm-1348337755.jpg Samsung shows no signs of slowing down in 2013 and after confirming plans to expand its chip-making plant in Austin, Texas, the company’s also unveiled its first 14nm FinFET test chip. The new design (which is being compared with Intel’s ‘Tri-Gate’](Intel will mass produce 3D transistors for all future CPUs, starting with 22nm Ivy Bridge (video)) found on its Ivy Bridge hardware) promises to offer substantial power and performance improvements compared to existing designs, with low-leakage often mentioned in the same breath as the new silicon. Samsung’s new test chip also involved ARM and Synopsis, and is a good sign that we might see its next-gen chips sooner rather than later.
Continue reading Samsung produces its first 14nm FinFET test chip, should offer substantial power improvements in future silicon
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Source: Yonhap news